Vishay Semiconductor Diodes Division - BYT51J-TR

KEY Part #: K6439095

BYT51J-TR Pricing (USD) [477149PC Stock]

  • 1 pcs$0.07791
  • 25,000 pcs$0.07752

Nimewo Pati:
BYT51J-TR
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE AVALANCHE 600V 1.5A SOD57. Rectifiers 1.5 Amp 600 Volt 50 Amp IFSM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Diodes - Zener - Arrays, Tiristors - SCR, Modil pouvwa chofè, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Single and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division BYT51J-TR electronic components. BYT51J-TR can be shipped within 24 hours after order. If you have any demands for BYT51J-TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYT51J-TR Atribi pwodwi yo

Nimewo Pati : BYT51J-TR
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE AVALANCHE 600V 1.5A SOD57
Seri : -
Estati Pati : Active
Kalite dyòd : Avalanche
Voltage - DC Ranvèse (Vr) (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 1.5A
Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 1A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 4µs
Kouran - Fèy Reverse @ Vr : 1µA @ 600V
Kapasite @ Vr, F : -
Mounting Kalite : Through Hole
Pake / Ka : SOD-57, Axial
Pake Aparèy Founisè : SOD-57
Operating Tanperati - Junction : -55°C ~ 175°C

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