[13921PC Stock]
- Nimewo Pati:
- ZXMNS3BM832TA
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N-CH 30V 2A 8-MLP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Arrays, Transistors - JFETs, Tiristors - DIACs, SIDACs, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - RF and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated ZXMNS3BM832TA electronic components. ZXMNS3BM832TA can be shipped within 24 hours after order. If you have any demands for ZXMNS3BM832TA, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ZXMNS3BM832TA Atribi pwodwi yo
Nimewo Pati :
ZXMNS3BM832TA
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH 30V 2A 8-MLP
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
180 mOhm @ 1.5A, 4.5V
Vgs (th) (Max) @ Id :
700mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
2.9nC @ 4.5V
Vgs (Max) :
±12V
Antre kapasite (Ciss) (Max) @ Vds :
314pF @ 15V
Karakteristik FET :
Schottky Diode (Isolated)
Disipasyon Pouvwa (Max) :
1W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-MLP, MicroFET (3x2)
Pake / Ka :
8-VDFN Exposed Pad
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