IPI120P04P4L03AKSA1 Pricing (USD) [2906PC Stock]
- 500 pcs$0.65724
- Nimewo Pati:
- IPI120P04P4L03AKSA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET P-CH TO262-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Single, Modil pouvwa chofè, Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR, Transistors - IGBTs - Arrays and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IPI120P04P4L03AKSA1 electronic components. IPI120P04P4L03AKSA1 can be shipped within 24 hours after order. If you have any demands for IPI120P04P4L03AKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPI120P04P4L03AKSA1 Atribi pwodwi yo
Nimewo Pati :
IPI120P04P4L03AKSA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET P-CH TO262-3
Seri :
Automotive, AEC-Q101, OptiMOS™
Estati Pati :
Obsolete
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
3.4 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 340µA
Chaje Gate (Qg) (Max) @ Vgs :
234nC @ 10V
Vgs (Max) :
±16V
Antre kapasite (Ciss) (Max) @ Vds :
15000pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
136W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PG-TO262-3-1
Pake / Ka :
TO-262-3 Long Leads, I²Pak, TO-262AA
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