BAS19,235 Pricing (USD) [4517943PC Stock]
- 1 pcs$0.00819
- 10,000 pcs$0.00764
- Nimewo Pati:
- BAS19,235
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- DIODE GEN PURP 100V 200MA SOT23. Diodes - General Purpose, Power, Switching DIODE SW TAPE-11
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Single, Diodes - Zener - Single, Transistors - Bipolè (BJT) - RF, Tiristors - DIACs, SIDACs, Transistors - Objektif espesyal, Tiristors - SCR - Modil yo and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. BAS19,235 electronic components. BAS19,235 can be shipped within 24 hours after order. If you have any demands for BAS19,235, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BAS19,235 Atribi pwodwi yo
Nimewo Pati :
BAS19,235
Manifakti :
Nexperia USA Inc.
Deskripsyon :
DIODE GEN PURP 100V 200MA SOT23
Seri :
-
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
100V
Kouran - Mwayèn Rèktifye (Io) :
200mA (DC)
Voltage - Forward (Vf) (Max) @ Si :
1.25V @ 200mA
Vitès :
Small Signal =< 200mA (Io), Any Speed
Ranvèse Tan Reverse (trr) :
50ns
Kouran - Fèy Reverse @ Vr :
100nA @ 100V
Kapasite @ Vr, F :
5pF @ 0V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-236-3, SC-59, SOT-23-3
Pake Aparèy Founisè :
TO-236AB
Operating Tanperati - Junction :
150°C (Max)
Dènye nouvèl
Ou ka enterese tou
-
BAT54T
ON Semiconductor
DIODE SCHOTTKY 30V 200MA SOT523. Schottky Diodes & Rectifiers 0.2A,30V,Surf Mt SCHOTTKY Barr DIODE
-
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23. Diodes - General Purpose, Power, Switching Silicon Switch Diode
-
BAS116E6433HTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode
-
-
BAL99E6327HTSA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Tuning Diode
-
BAL99E6433HTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Tuning Diode
Pati cho
- CR5F-120 BK
- IRD3CH11DF6
- FR306TA
- CMSH1-100 BK
- JANTX1N6624U
- JAN1N6622US
- VS-30BQ100GPBF
- DSB3A40
- HS247180R
- UF5A400D1
- RD0106T-H
- UGF15HT-E3/45
- UF1506S-B
- MBRH20045L
- 1N1203BR
- GP10AHE3/54
- MBR1040
- STPS1545R
- MBRD360
- MA2C700A0F
- STTH3L06B-TR
- BYW80-200
- MBRB1045TRL
- 1N6542
- SD233N36S50PSC
- 6TQ045S
- 1N6549
- ES1J-TP
- FS2B-TP
- R2500-TP
- FR203-TP
- 1N4935-TP
- FR503-AP
- RS 1AV
- ES3G R7G
- RB160M-50TR
- MURS360SHE3_A/H
- SE20PDHM3/85A
- GP10-4007-E3/54
- BAS4002LE6327XTMA1