Deskripsyon :
GAN TRANS 200V 8.5A BUMPED DIE
Teknoloji :
GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
8.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
5V
RD sou (Max) @ Id, Vgs :
50 mOhm @ 7A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 1.5mA
Chaje Gate (Qg) (Max) @ Vgs :
2.5nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds :
270pF @ 100V
Disipasyon Pouvwa (Max) :
-
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
Die