IXYS - IXFH6N90

KEY Part #: K6415080

[12534PC Stock]


    Nimewo Pati:
    IXFH6N90
    Manifakti:
    IXYS
    Detaye deskripsyon:
    MOSFET N-CH 900V 6A TO-247AD.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Tiristors - DIACs, SIDACs, Tiristors - SCR, Diodes - Rèkteur - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Single and Tiristors - SCR - Modil yo ...
    Avantaj konpetitif:
    We specialize in IXYS IXFH6N90 electronic components. IXFH6N90 can be shipped within 24 hours after order. If you have any demands for IXFH6N90, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IXFH6N90 Atribi pwodwi yo

    Nimewo Pati : IXFH6N90
    Manifakti : IXYS
    Deskripsyon : MOSFET N-CH 900V 6A TO-247AD
    Seri : HiPerFET™
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 900V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 2 Ohm @ 3A, 10V
    Vgs (th) (Max) @ Id : 4.5V @ 2.5mA
    Chaje Gate (Qg) (Max) @ Vgs : 130nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 2600pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 300W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : TO-247AD (IXFH)
    Pake / Ka : TO-247-3