BS107PSTZ Pricing (USD) [254929PC Stock]
- 1 pcs$0.14509
- Nimewo Pati:
- BS107PSTZ
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N-CH 200V 0.12A TO92-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - JFETs, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Single, Transistors - Objektif espesyal, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - RF and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated BS107PSTZ electronic components. BS107PSTZ can be shipped within 24 hours after order. If you have any demands for BS107PSTZ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BS107PSTZ Atribi pwodwi yo
Nimewo Pati :
BS107PSTZ
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH 200V 0.12A TO92-3
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
120mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.6V, 5V
RD sou (Max) @ Id, Vgs :
30 Ohm @ 100mA, 5V
Vgs (th) (Max) @ Id :
-
Chaje Gate (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
85pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
500mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
E-Line (TO-92 compatible)
Pake / Ka :
E-Line-3
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