IRFBA90N20DPBF Pricing (USD) [12988PC Stock]
- 1 pcs$3.04524
- 10 pcs$2.74204
- 100 pcs$2.25462
- 500 pcs$1.88901
- 1,000 pcs$1.64526
- Nimewo Pati:
- IRFBA90N20DPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 200V 98A SUPER-220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - IGBTs - Single, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Arrays, Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRFBA90N20DPBF electronic components. IRFBA90N20DPBF can be shipped within 24 hours after order. If you have any demands for IRFBA90N20DPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFBA90N20DPBF Atribi pwodwi yo
Nimewo Pati :
IRFBA90N20DPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 200V 98A SUPER-220
Seri :
HEXFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
98A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
23 mOhm @ 59A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
240nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
6080pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
650W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
SUPER-220™ (TO-273AA)
Pake / Ka :
Super-220™-3 (Straight Leads)
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