Vishay Semiconductor Diodes Division - GBUE2560-M3/P

KEY Part #: K6542570

GBUE2560-M3/P Pricing (USD) [24228PC Stock]

  • 1 pcs$1.70110

Nimewo Pati:
GBUE2560-M3/P
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
BRIDGE RECT 1PHASE 600V 4.9A GBU. Bridge Rectifiers 600V Vrrm; 25A If Case Style GBU
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Single, Diodes - Zener - Single, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - DIACs, SIDACs, Transistors - JFETs and Transistors - FETs, MOSFETs - RF ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division GBUE2560-M3/P electronic components. GBUE2560-M3/P can be shipped within 24 hours after order. If you have any demands for GBUE2560-M3/P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GBUE2560-M3/P Atribi pwodwi yo

Nimewo Pati : GBUE2560-M3/P
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : BRIDGE RECT 1PHASE 600V 4.9A GBU
Seri : -
Estati Pati : Active
Kalite dyòd : Single Phase
Teknoloji : Standard
Voltage - Peak Ranvèse (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 4.9A
Voltage - Forward (Vf) (Max) @ Si : 920mV @ 12.5A
Kouran - Fèy Reverse @ Vr : 10µA @ 600V
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : 4-SIP, GBU
Pake Aparèy Founisè : GBU

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