Nimewo Pati :
FESB16HT-E3/81
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 500V 16A TO263AB
Voltage - DC Ranvèse (Vr) (Max) :
500V
Kouran - Mwayèn Rèktifye (Io) :
16A
Voltage - Forward (Vf) (Max) @ Si :
1.5V @ 16A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
50ns
Kouran - Fèy Reverse @ Vr :
10µA @ 500V
Kapasite @ Vr, F :
145pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè :
TO-263AB
Operating Tanperati - Junction :
-65°C ~ 150°C