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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FDT1600N10ALZ

ON Semiconductor - FDT1600N10ALZ

KEY Part #: K6395940

FDT1600N10ALZ Pricing (USD) [386275PC Stock]

  • 1 pcs$0.09623
  • 4,000 pcs$0.09575
Nimewo Pati:
FDT1600N10ALZ
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 100V SOT-223-4.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - RF, Transistors - Bipolè (BJT) - Single, Tiristors - SCR - Modil yo, Transistors - Objektif espesyal and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDT1600N10ALZ electronic components. FDT1600N10ALZ can be shipped within 24 hours after order. If you have any demands for FDT1600N10ALZ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDT1600N10ALZ Atribi pwodwi yo

Nimewo Pati : FDT1600N10ALZ
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 100V SOT-223-4
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5.6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V, 10V
RD sou (Max) @ Id, Vgs : 160 mOhm @ 2.8A, 10V
Vgs (th) (Max) @ Id : 2.8V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 3.77nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 225pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 10.42W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-223-4
Pake / Ka : TO-261-4, TO-261AA

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