Rohm Semiconductor - RDD020N60TL

KEY Part #: K6420218

RDD020N60TL Pricing (USD) [171284PC Stock]

  • 1 pcs$0.23872
  • 2,500 pcs$0.23754

Nimewo Pati:
RDD020N60TL
Manifakti:
Rohm Semiconductor
Detaye deskripsyon:
MOSFET N-CH 600V 2A CPT3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - IGBTs - Modil yo, Transistors - Objektif espesyal, Transistors - JFETs, Modil pouvwa chofè, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Diodes - Zener - Single ...
Avantaj konpetitif:
We specialize in Rohm Semiconductor RDD020N60TL electronic components. RDD020N60TL can be shipped within 24 hours after order. If you have any demands for RDD020N60TL, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RDD020N60TL Atribi pwodwi yo

Nimewo Pati : RDD020N60TL
Manifakti : Rohm Semiconductor
Deskripsyon : MOSFET N-CH 600V 2A CPT3
Seri : -
Estati Pati : Not For New Designs
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : -
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : -
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 20W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : CPT3
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

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