Toshiba Semiconductor and Storage - TK6P53D(T6RSS-Q)

KEY Part #: K6420124

TK6P53D(T6RSS-Q) Pricing (USD) [162137PC Stock]

  • 1 pcs$0.25219
  • 2,000 pcs$0.25094

Nimewo Pati:
TK6P53D(T6RSS-Q)
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET N-CH 525V 6A DPAK-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Single, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Arrays and Diodes - RF ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK6P53D(T6RSS-Q) Atribi pwodwi yo

Nimewo Pati : TK6P53D(T6RSS-Q)
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N-CH 525V 6A DPAK-3
Seri : π-MOSVII
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 525V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 1.3 Ohm @ 3A, 10V
Vgs (th) (Max) @ Id : 4.4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 12nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 600pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 100W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D-Pak
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63