Microsemi Corporation - APT70GR120JD60

KEY Part #: K6532645

APT70GR120JD60 Pricing (USD) [2401PC Stock]

  • 1 pcs$18.04090
  • 10 pcs$16.68853
  • 25 pcs$15.33542
  • 100 pcs$14.25287

Nimewo Pati:
APT70GR120JD60
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
IGBT 1200V 112A 543W SOT227.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Arrays, Modil pouvwa chofè, Diodes - Zener - Single and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
We specialize in Microsemi Corporation APT70GR120JD60 electronic components. APT70GR120JD60 can be shipped within 24 hours after order. If you have any demands for APT70GR120JD60, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT70GR120JD60 Atribi pwodwi yo

Nimewo Pati : APT70GR120JD60
Manifakti : Microsemi Corporation
Deskripsyon : IGBT 1200V 112A 543W SOT227
Seri : -
Estati Pati : Active
Kalite IGBT : NPT
Nou konte genyen : Single
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 112A
Pouvwa - Max : 543W
Vce (sou) (Max) @ Vge, Ic : 3.2V @ 15V, 70A
Kouran - Cutoff Pèseptè (Max) : 1.1mA
Antre kapasite (Cies) @ Vce : 7.26nF @ 25V
Antre : Standard
NTC thermistor : No
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : SOT-227-4
Pake Aparèy Founisè : SOT-227

Ou ka enterese tou
  • VS-ETF150Y65N

    Vishay Semiconductor Diodes Division

    IGBT 650V 150A EMIPAK-2B.

  • CPV363M4K

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 6A IMS-2.

  • CPV362M4K

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 31 IMS-2.

  • CPV362M4U

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 3.9A IMS-2.

  • CPV363M4U

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 6.8A IMS-2.

  • A2C25S12M3-F

    STMicroelectronics

    IGBT TRENCH 1200V 25A ACEPACK2.