Nimewo Pati :
SICRF101200
Manifakti :
SMC Diode Solutions
Deskripsyon :
DIODE SCHOTTKY SILICON CARBIDE S
Kalite dyòd :
Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) :
1200V
Kouran - Mwayèn Rèktifye (Io) :
10A
Voltage - Forward (Vf) (Max) @ Si :
1.8V @ 10A
Vitès :
No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) :
0ns
Kouran - Fèy Reverse @ Vr :
100µA @ 1200V
Kapasite @ Vr, F :
640pF @ 0V, 1MHz
Mounting Kalite :
Through Hole
Pake / Ka :
TO-220-2 Full Pack, Isolated Tab
Pake Aparèy Founisè :
ITO-220AC
Operating Tanperati - Junction :
-55°C ~ 175°C