Infineon Technologies - FZ800R12KS4B2NOSA1

KEY Part #: K6533482

FZ800R12KS4B2NOSA1 Pricing (USD) [85PC Stock]

  • 1 pcs$419.92099

Nimewo Pati:
FZ800R12KS4B2NOSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MODULE IGBT A-IHM130-1.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Arrays, Tiristors - TRIACs and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
We specialize in Infineon Technologies FZ800R12KS4B2NOSA1 electronic components. FZ800R12KS4B2NOSA1 can be shipped within 24 hours after order. If you have any demands for FZ800R12KS4B2NOSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FZ800R12KS4B2NOSA1 Atribi pwodwi yo

Nimewo Pati : FZ800R12KS4B2NOSA1
Manifakti : Infineon Technologies
Deskripsyon : MODULE IGBT A-IHM130-1
Seri : -
Estati Pati : Not For New Designs
Kalite IGBT : -
Nou konte genyen : Single
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 1200A
Pouvwa - Max : 7600W
Vce (sou) (Max) @ Vge, Ic : 3.7V @ 15V, 800A
Kouran - Cutoff Pèseptè (Max) : 5mA
Antre kapasite (Cies) @ Vce : 52nF @ 25V
Antre : Standard
NTC thermistor : No
Operating Tanperati : -40°C ~ 125°C
Mounting Kalite : Chassis Mount
Pake / Ka : Module
Pake Aparèy Founisè : Module

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