DMN2013UFX-7 Pricing (USD) [297714PC Stock]
- 1 pcs$0.12424
- Nimewo Pati:
- DMN2013UFX-7
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET 2N-CH 20V 10A 6-DFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Modil pouvwa chofè, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - RF, Tiristors - TRIACs and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMN2013UFX-7 electronic components. DMN2013UFX-7 can be shipped within 24 hours after order. If you have any demands for DMN2013UFX-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN2013UFX-7 Atribi pwodwi yo
Nimewo Pati :
DMN2013UFX-7
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET 2N-CH 20V 10A 6-DFN
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual) Common Drain
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10A (Ta)
RD sou (Max) @ Id, Vgs :
11.5 mOhm @ 8.5A, 4.5V
Vgs (th) (Max) @ Id :
1.1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
57.4nC @ 8V
Antre kapasite (Ciss) (Max) @ Vds :
2607pF @ 10V
Pouvwa - Max :
2.14W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
6-VFDFN Exposed Pad
Pake Aparèy Founisè :
W-DFN5020-6
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