[9434PC Stock]
- Nimewo Pati:
- FGH30N120FTDTU
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- IGBT 1200V 60A 339W TO247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Arrays and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FGH30N120FTDTU electronic components. FGH30N120FTDTU can be shipped within 24 hours after order. If you have any demands for FGH30N120FTDTU, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FGH30N120FTDTU Atribi pwodwi yo
Nimewo Pati :
FGH30N120FTDTU
Manifakti :
ON Semiconductor
Deskripsyon :
IGBT 1200V 60A 339W TO247
Seri :
-
Estati Pati :
Obsolete
Kalite IGBT :
Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
60A
Kouran - Pèseptè batman (Icm) :
90A
Vce (sou) (Max) @ Vge, Ic :
2V @ 15V, 30A
Pouvwa - Max :
339W
Oblije chanje enèji :
-
Kalite Antre :
Standard
Gate chaje :
208nC
Td (on / off) @ 25 ° C :
-
Kondisyon egzamen an :
-
Ranvèse Tan Reverse (trr) :
730ns
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3
Pake Aparèy Founisè :
TO-247
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