IXT-1-1N100S1-TR Pricing (USD) [12392PC Stock]
- 1 pcs$3.51403
- 2,500 pcs$3.49655
- Nimewo Pati:
- IXT-1-1N100S1-TR
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 1000V 1.5A 8-SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - RF and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in IXYS IXT-1-1N100S1-TR electronic components. IXT-1-1N100S1-TR can be shipped within 24 hours after order. If you have any demands for IXT-1-1N100S1-TR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXT-1-1N100S1-TR Atribi pwodwi yo
Nimewo Pati :
IXT-1-1N100S1-TR
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 1000V 1.5A 8-SOIC
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
-
RD sou (Max) @ Id, Vgs :
-
Vgs (th) (Max) @ Id :
-
Chaje Gate (Qg) (Max) @ Vgs :
-
Vgs (Max) :
-
Antre kapasite (Ciss) (Max) @ Vds :
-
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
-
Operating Tanperati :
-
Mounting Kalite :
-
Pake Aparèy Founisè :
-
Pake / Ka :
-
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