ITT Cannon, LLC - 120220-0311

KEY Part #: K7359517

120220-0311 Pricing (USD) [1000228PC Stock]

  • 1 pcs$0.03698
  • 6,800 pcs$0.03480
  • 13,600 pcs$0.03045
  • 34,000 pcs$0.02937
  • 68,000 pcs$0.02828

Nimewo Pati:
120220-0311
Manifakti:
ITT Cannon, LLC
Detaye deskripsyon:
MICRO UNIVERSAL CONTACT Z 1.8MM. Battery Contacts
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: RF diplexèks, RF Direksyon koupleur, RF pouvwa divizeur / Splitters, RF Transmetè, Evalyasyon RFID ak twous Devlopman, Boards, Pwodwi pou Telefòn RFID, Transpondè RFID, Tags and RFID Reader Modules ...
Avantaj konpetitif:
We specialize in ITT Cannon, LLC 120220-0311 electronic components. 120220-0311 can be shipped within 24 hours after order. If you have any demands for 120220-0311, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

120220-0311 Atribi pwodwi yo

Nimewo Pati : 120220-0311
Manifakti : ITT Cannon, LLC
Deskripsyon : MICRO UNIVERSAL CONTACT Z 1.8MM
Seri : -
Estati Pati : Active
Kalite : Shield Finger, Pre-Loaded
Fòm : -
Lajè : 0.038" (0.96mm)
Longè : 0.098" (2.50mm)
Wotè : 0.071" (1.80mm)
Materyèl : Titanium Copper
PLATING : Nickel
PLATING - Epesè : 118.11µin (3.00µm)
Metòd Atachman : Solder
Operating Tanperati : -

Ou ka enterese tou
  • K4A4G085WE-BIRC

    Samsung Semiconductor

    4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

  • K4ABG165WA-MCWE

    Samsung Semiconductor

    32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

  • K4A4G085WE-BITD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

  • K4A4G085WF-BCTD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

  • K4A4G085WF-BITD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

  • K4A4G165WE-BCWE

    Samsung Semiconductor

    4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.