Microsemi Corporation - 1N5553US

KEY Part #: K6440502

1N5553US Pricing (USD) [7165PC Stock]

  • 1 pcs$5.91419
  • 10 pcs$5.37698
  • 25 pcs$4.97374
  • 100 pcs$4.57046
  • 250 pcs$4.16715
  • 500 pcs$3.89831

Nimewo Pati:
1N5553US
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
DIODE GEN PURP 800V 3A B-MELF. Rectifiers Rectifier
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Single, Tiristors - SCR, Transistors - IGBTs - Modil yo and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
We specialize in Microsemi Corporation 1N5553US electronic components. 1N5553US can be shipped within 24 hours after order. If you have any demands for 1N5553US, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N5553US Atribi pwodwi yo

Nimewo Pati : 1N5553US
Manifakti : Microsemi Corporation
Deskripsyon : DIODE GEN PURP 800V 3A B-MELF
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 800V
Kouran - Mwayèn Rèktifye (Io) : 3A
Voltage - Forward (Vf) (Max) @ Si : 1.2V @ 9A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 2µs
Kouran - Fèy Reverse @ Vr : 1µA @ 800V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : SQ-MELF, B
Pake Aparèy Founisè : B, SQ-MELF
Operating Tanperati - Junction : -65°C ~ 175°C

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