IXYS - IXGX120N60B

KEY Part #: K6424394

[9325PC Stock]


    Nimewo Pati:
    IXGX120N60B
    Manifakti:
    IXYS
    Detaye deskripsyon:
    IGBT 600V 200A 660W TO247.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Tiristors - DIACs, SIDACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Single and Transistors - Bipolè (BJT) - Single ...
    Avantaj konpetitif:
    We specialize in IXYS IXGX120N60B electronic components. IXGX120N60B can be shipped within 24 hours after order. If you have any demands for IXGX120N60B, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IXGX120N60B Atribi pwodwi yo

    Nimewo Pati : IXGX120N60B
    Manifakti : IXYS
    Deskripsyon : IGBT 600V 200A 660W TO247
    Seri : HiPerFAST™
    Estati Pati : Obsolete
    Kalite IGBT : PT
    Voltage - Pèseptè ki emèt deba (Max) : 600V
    Kouran - Pèseptè (Ic) (Max) : 200A
    Kouran - Pèseptè batman (Icm) : 300A
    Vce (sou) (Max) @ Vge, Ic : 2.1V @ 15V, 120A
    Pouvwa - Max : 660W
    Oblije chanje enèji : 2.4mJ (on), 5.5mJ (off)
    Kalite Antre : Standard
    Gate chaje : 350nC
    Td (on / off) @ 25 ° C : 60ns/200ns
    Kondisyon egzamen an : 480V, 100A, 2.4 Ohm, 15V
    Ranvèse Tan Reverse (trr) : -
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake / Ka : TO-247-3
    Pake Aparèy Founisè : PLUS247™-3