Toshiba Semiconductor and Storage - TK31J60W,S1VQ

KEY Part #: K6394517

TK31J60W,S1VQ Pricing (USD) [11067PC Stock]

  • 1 pcs$4.09851
  • 25 pcs$3.35902
  • 100 pcs$3.03127
  • 500 pcs$2.53971

Nimewo Pati:
TK31J60W,S1VQ
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET N CH 600V 30.8A TO-3PN.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo, Transistors - IGBTs - Arrays, Diodes - Zener - Arrays and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK31J60W,S1VQ Atribi pwodwi yo

Nimewo Pati : TK31J60W,S1VQ
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N CH 600V 30.8A TO-3PN
Seri : DTMOSIV
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 30.8A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 88 mOhm @ 15.4A, 10V
Vgs (th) (Max) @ Id : 3.7V @ 1.5mA
Chaje Gate (Qg) (Max) @ Vgs : 86nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 3000pF @ 300V
Karakteristik FET : Super Junction
Disipasyon Pouvwa (Max) : 230W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-3P(N)
Pake / Ka : TO-3P-3, SC-65-3