IXTY26P10T Pricing (USD) [41564PC Stock]
- 1 pcs$1.03997
- 70 pcs$1.03480
- Nimewo Pati:
- IXTY26P10T
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET P-CH 100V 26A TO-252.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Tiristors - TRIACs, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Arrays, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Arrays, Transistors - Pwogramasyon Unijunction and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in IXYS IXTY26P10T electronic components. IXTY26P10T can be shipped within 24 hours after order. If you have any demands for IXTY26P10T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTY26P10T Atribi pwodwi yo
Nimewo Pati :
IXTY26P10T
Manifakti :
IXYS
Deskripsyon :
MOSFET P-CH 100V 26A TO-252
Seri :
TrenchP™
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
26A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
90 mOhm @ 13A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
52nC @ 10V
Vgs (Max) :
±15V
Antre kapasite (Ciss) (Max) @ Vds :
3820pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
150W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-252
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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