1N6483HE3/96 Pricing (USD) [665064PC Stock]
- 1 pcs$0.05562
- 6,000 pcs$0.05085
- Nimewo Pati:
- 1N6483HE3/96
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 800V 1A DO213AB. Rectifiers 800 Volt 1.0 Amp 30 Amp IFSM
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Single, Diodes - Bridge rèktifikateur, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division 1N6483HE3/96 electronic components. 1N6483HE3/96 can be shipped within 24 hours after order. If you have any demands for 1N6483HE3/96, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1N6483HE3/96 Atribi pwodwi yo
Nimewo Pati :
1N6483HE3/96
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 800V 1A DO213AB
Seri :
SUPERECTIFIER®
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
800V
Kouran - Mwayèn Rèktifye (Io) :
1A
Voltage - Forward (Vf) (Max) @ Si :
1.1V @ 1A
Vitès :
Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
10µA @ 800V
Kapasite @ Vr, F :
8pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-213AB, MELF (Glass)
Pake Aparèy Founisè :
DO-213AB
Operating Tanperati - Junction :
-65°C ~ 175°C
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