APTC90DAM60T1G Pricing (USD) [2215PC Stock]
- 100 pcs$21.96250
- Nimewo Pati:
- APTC90DAM60T1G
- Manifakti:
- Microsemi Corporation
- Detaye deskripsyon:
- MOSFET N-CH 900V 59A SP1.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - Objektif espesyal, Tiristors - TRIACs, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Single, Transistors - IGBTs - Single and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in Microsemi Corporation APTC90DAM60T1G electronic components. APTC90DAM60T1G can be shipped within 24 hours after order. If you have any demands for APTC90DAM60T1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APTC90DAM60T1G Atribi pwodwi yo
Nimewo Pati :
APTC90DAM60T1G
Manifakti :
Microsemi Corporation
Deskripsyon :
MOSFET N-CH 900V 59A SP1
Seri :
CoolMOS™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
900V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
59A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
60 mOhm @ 52A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 6mA
Chaje Gate (Qg) (Max) @ Vgs :
540nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
13600pF @ 100V
Karakteristik FET :
Super Junction
Disipasyon Pouvwa (Max) :
462W (Tc)
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SP1
Pake / Ka :
SP1
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