CSD23285F5 Pricing (USD) [644086PC Stock]
- 1 pcs$0.05743
- 3,000 pcs$0.04873
- Nimewo Pati:
- CSD23285F5
- Manifakti:
- Texas Instruments
- Detaye deskripsyon:
- MOSFET P-CH 12V.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Diodes - Zener - Single, Transistors - Objektif espesyal, Tiristors - SCR, Diodes - Rèkteur - Single, Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in Texas Instruments CSD23285F5 electronic components. CSD23285F5 can be shipped within 24 hours after order. If you have any demands for CSD23285F5, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD23285F5 Atribi pwodwi yo
Nimewo Pati :
CSD23285F5
Manifakti :
Texas Instruments
Deskripsyon :
MOSFET P-CH 12V
Seri :
FemtoFET™
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.4A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.5V, 4.5V
RD sou (Max) @ Id, Vgs :
35 mOhm @ 1A, 4.5V
Vgs (th) (Max) @ Id :
950mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
4.2nC @ 4.5V
Vgs (Max) :
-6V
Antre kapasite (Ciss) (Max) @ Vds :
628pF @ 6V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
500mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
3-PICOSTAR
Pake / Ka :
3-XFDFN
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