GeneSiC Semiconductor - GA35XCP12-247

KEY Part #: K6423768

GA35XCP12-247 Pricing (USD) [9539PC Stock]

  • 510 pcs$12.85554

Nimewo Pati:
GA35XCP12-247
Manifakti:
GeneSiC Semiconductor
Detaye deskripsyon:
IGBT 1200V SOT247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Tiristors - TRIACs, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Single, Tiristors - SCR - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Diodes - RF ...
Avantaj konpetitif:
We specialize in GeneSiC Semiconductor GA35XCP12-247 electronic components. GA35XCP12-247 can be shipped within 24 hours after order. If you have any demands for GA35XCP12-247, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GA35XCP12-247 Atribi pwodwi yo

Nimewo Pati : GA35XCP12-247
Manifakti : GeneSiC Semiconductor
Deskripsyon : IGBT 1200V SOT247
Seri : -
Estati Pati : Obsolete
Kalite IGBT : PT
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : -
Kouran - Pèseptè batman (Icm) : 35A
Vce (sou) (Max) @ Vge, Ic : 3V @ 15V, 35A
Pouvwa - Max : -
Oblije chanje enèji : 2.66mJ (on), 4.35mJ (off)
Kalite Antre : Standard
Gate chaje : 50nC
Td (on / off) @ 25 ° C : -
Kondisyon egzamen an : 800V, 35A, 22 Ohm, 15V
Ranvèse Tan Reverse (trr) : 36ns
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : TO-247AB