Nimewo Pati :
VS-ETH3006S-M3
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 600V 30A D2PAK
Voltage - DC Ranvèse (Vr) (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) :
30A
Voltage - Forward (Vf) (Max) @ Si :
2.65V @ 30A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
26ns
Kouran - Fèy Reverse @ Vr :
30µA @ 600V
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè :
D2PAK
Operating Tanperati - Junction :
-65°C ~ 175°C