Vishay Semiconductor Diodes Division - MMBD6050-G3-18

KEY Part #: K6458634

MMBD6050-G3-18 Pricing (USD) [3236035PC Stock]

  • 1 pcs$0.01206
  • 10,000 pcs$0.01200

Nimewo Pati:
MMBD6050-G3-18
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 70V 200MA SOT23. Diodes - General Purpose, Power, Switching 70 Volt 200mA 4ns 500mA IFSM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division MMBD6050-G3-18 electronic components. MMBD6050-G3-18 can be shipped within 24 hours after order. If you have any demands for MMBD6050-G3-18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MMBD6050-G3-18 Atribi pwodwi yo

Nimewo Pati : MMBD6050-G3-18
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 70V 200MA SOT23
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 70V
Kouran - Mwayèn Rèktifye (Io) : 200mA
Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 100mA
Vitès : Small Signal =< 200mA (Io), Any Speed
Ranvèse Tan Reverse (trr) : 4ns
Kouran - Fèy Reverse @ Vr : 100nA @ 50V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : TO-236-3, SC-59, SOT-23-3
Pake Aparèy Founisè : SOT-23
Operating Tanperati - Junction : 150°C (Max)

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