IRFB4227PBF Pricing (USD) [26568PC Stock]
- 1 pcs$1.30006
- 10 pcs$1.17270
- 100 pcs$0.89407
- 500 pcs$0.69538
- 1,000 pcs$0.57618
- Nimewo Pati:
- IRFB4227PBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 200V 65A TO-220AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - DIACs, SIDACs and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRFB4227PBF electronic components. IRFB4227PBF can be shipped within 24 hours after order. If you have any demands for IRFB4227PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFB4227PBF Atribi pwodwi yo
Nimewo Pati :
IRFB4227PBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 200V 65A TO-220AB
Seri :
HEXFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
65A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
24 mOhm @ 46A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
98nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
4600pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
330W (Tc)
Operating Tanperati :
-40°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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