BTS282ZE3180AATMA2 Pricing (USD) [31424PC Stock]
- 1 pcs$1.31155
- 1,000 pcs$1.00084
- Nimewo Pati:
- BTS282ZE3180AATMA2
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 49V 80A TO-220-7.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - RF, Diodes - Zener - Arrays, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors) and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies BTS282ZE3180AATMA2 electronic components. BTS282ZE3180AATMA2 can be shipped within 24 hours after order. If you have any demands for BTS282ZE3180AATMA2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BTS282ZE3180AATMA2 Atribi pwodwi yo
Nimewo Pati :
BTS282ZE3180AATMA2
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 49V 80A TO-220-7
Seri :
TEMPFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
49V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
80A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
6.5 mOhm @ 36A, 10V
Vgs (th) (Max) @ Id :
2V @ 240µA
Chaje Gate (Qg) (Max) @ Vgs :
232nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
4800pF @ 25V
Karakteristik FET :
Temperature Sensing Diode
Disipasyon Pouvwa (Max) :
300W (Tc)
Operating Tanperati :
-40°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-TO263-7-1
Pake / Ka :
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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