SI6562CDQ-T1-GE3 Pricing (USD) [193304PC Stock]
- 1 pcs$0.19134
- 3,000 pcs$0.17968
- Nimewo Pati:
- SI6562CDQ-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N/P-CH 20V 6.7A 8-TSSOP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Single, Modil pouvwa chofè, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Pwogramasyon Unijunction, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SI6562CDQ-T1-GE3 electronic components. SI6562CDQ-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI6562CDQ-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI6562CDQ-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SI6562CDQ-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N/P-CH 20V 6.7A 8-TSSOP
Seri :
TrenchFET®
Estati Pati :
Active
FET Kalite :
N and P-Channel
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6.7A, 6.1A
RD sou (Max) @ Id, Vgs :
22 mOhm @ 5.7A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
23nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
850pF @ 10V
Pouvwa - Max :
1.6W, 1.7W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-TSSOP (0.173", 4.40mm Width)
Pake Aparèy Founisè :
8-TSSOP
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