ON Semiconductor - NVMFD5485NLT3G

KEY Part #: K6525179

NVMFD5485NLT3G Pricing (USD) [109290PC Stock]

  • 1 pcs$0.33843
  • 5,000 pcs$0.30767

Nimewo Pati:
NVMFD5485NLT3G
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET 2N-CH 60V 5.3A DFN8.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Modil pouvwa chofè, Transistors - IGBTs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NVMFD5485NLT3G Atribi pwodwi yo

Nimewo Pati : NVMFD5485NLT3G
Manifakti : ON Semiconductor
Deskripsyon : MOSFET 2N-CH 60V 5.3A DFN8
Seri : -
Estati Pati : Not For New Designs
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5.3A
RD sou (Max) @ Id, Vgs : 44 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 20nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 560pF @ 25V
Pouvwa - Max : 2.9W
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-PowerTDFN
Pake Aparèy Founisè : 8-DFN (5x6) Dual Flag (SO8FL-Dual)