[4059PC Stock]
- Nimewo Pati:
- VQ1006P-E3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET 4N-CH 90V 0.4A 14DIP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Modil yo, Transistors - Pwogramasyon Unijunction, Diodes - Bridge rèktifikateur, Tiristors - SCR, Tiristors - SCR - Modil yo and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix VQ1006P-E3 electronic components. VQ1006P-E3 can be shipped within 24 hours after order. If you have any demands for VQ1006P-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VQ1006P-E3 Atribi pwodwi yo
Nimewo Pati :
VQ1006P-E3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET 4N-CH 90V 0.4A 14DIP
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
4 N-Channel
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
90V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
400mA
RD sou (Max) @ Id, Vgs :
4.5 Ohm @ 1A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
-
Antre kapasite (Ciss) (Max) @ Vds :
60pF @ 25V
Pouvwa - Max :
2W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
-
Pake Aparèy Founisè :
14-DIP
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