[2220PC Stock]
- Nimewo Pati:
- 2SK1829TE85LF
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N-CH 20V 0.05A USM.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - RF, Transistors - Pwogramasyon Unijunction, Transistors - JFETs, Diodes - Rèkteur - Single and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage 2SK1829TE85LF electronic components. 2SK1829TE85LF can be shipped within 24 hours after order. If you have any demands for 2SK1829TE85LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
2SK1829TE85LF Atribi pwodwi yo
Nimewo Pati :
2SK1829TE85LF
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 20V 0.05A USM
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
50mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V
RD sou (Max) @ Id, Vgs :
40 Ohm @ 10mA, 2.5V
Vgs (th) (Max) @ Id :
-
Chaje Gate (Qg) (Max) @ Vgs :
-
Vgs (Max) :
10V
Antre kapasite (Ciss) (Max) @ Vds :
5.5pF @ 3V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
100mW (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SC-70
Pake / Ka :
SC-70, SOT-323
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