Rohm Semiconductor - RSH070N05GZETB

KEY Part #: K6420694

RSH070N05GZETB Pricing (USD) [233487PC Stock]

  • 1 pcs$0.17513
  • 2,500 pcs$0.17426

Nimewo Pati:
RSH070N05GZETB
Manifakti:
Rohm Semiconductor
Detaye deskripsyon:
MOSFET N-CH 45V 7A SOP8.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Single, Tiristors - SCR - Modil yo, Diodes - RF, Diodes - Zener - Single, Transistors - IGBTs - Arrays and Diodes - Zener - Arrays ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RSH070N05GZETB Atribi pwodwi yo

Nimewo Pati : RSH070N05GZETB
Manifakti : Rohm Semiconductor
Deskripsyon : MOSFET N-CH 45V 7A SOP8
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 45V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4V, 10V
RD sou (Max) @ Id, Vgs : 25 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 16.8nC @ 5V
Vgs (Max) : 20V
Antre kapasite (Ciss) (Max) @ Vds : 1000pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2W (Ta)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-SOP
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)