ON Semiconductor - NGTB40N120S3WG

KEY Part #: K6422576

NGTB40N120S3WG Pricing (USD) [14062PC Stock]

  • 1 pcs$2.84692
  • 10 pcs$2.55518
  • 100 pcs$2.09341
  • 500 pcs$1.78209
  • 1,000 pcs$1.50296

Nimewo Pati:
NGTB40N120S3WG
Manifakti:
ON Semiconductor
Detaye deskripsyon:
IGBT 1.2KV 40A TO247-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - JFETs, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Arrays, Diodes - RF, Diodes - Varyab kapasite (Varicaps, Varactors) and Tiristors - SCR ...
Avantaj konpetitif:
We specialize in ON Semiconductor NGTB40N120S3WG electronic components. NGTB40N120S3WG can be shipped within 24 hours after order. If you have any demands for NGTB40N120S3WG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NGTB40N120S3WG Atribi pwodwi yo

Nimewo Pati : NGTB40N120S3WG
Manifakti : ON Semiconductor
Deskripsyon : IGBT 1.2KV 40A TO247-3
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 160A
Kouran - Pèseptè batman (Icm) : 160A
Vce (sou) (Max) @ Vge, Ic : 1.95V @ 15V, 40A
Pouvwa - Max : 454W
Oblije chanje enèji : 2.2mJ (on), 1.1mJ (off)
Kalite Antre : Standard
Gate chaje : 212nC
Td (on / off) @ 25 ° C : 12ns/145ns
Kondisyon egzamen an : 600V, 40A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) : 163ns
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : TO-247-3