Nimewo Pati :
SIDC24D30SIC3
Manifakti :
Infineon Technologies
Deskripsyon :
DIODE SILICON 300V 10A WAFER
Estati Pati :
Discontinued at Digi-Key
Kalite dyòd :
Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) :
300V
Kouran - Mwayèn Rèktifye (Io) :
10A (DC)
Voltage - Forward (Vf) (Max) @ Si :
1.7V @ 10A
Vitès :
No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) :
0ns
Kouran - Fèy Reverse @ Vr :
200µA @ 300V
Kapasite @ Vr, F :
600pF @ 1V, 1MHz
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
Sawn on foil
Operating Tanperati - Junction :
-55°C ~ 175°C