IXTP08N100D2 Pricing (USD) [56000PC Stock]
- 1 pcs$0.76930
- 10 pcs$0.69530
- 100 pcs$0.55879
- 500 pcs$0.43461
- 1,000 pcs$0.34064
- Nimewo Pati:
- IXTP08N100D2
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 1000V 0.8A TO220AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Bridge rèktifikateur, Tiristors - TRIACs, Tiristors - SCR - Modil yo and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in IXYS IXTP08N100D2 electronic components. IXTP08N100D2 can be shipped within 24 hours after order. If you have any demands for IXTP08N100D2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTP08N100D2 Atribi pwodwi yo
Nimewo Pati :
IXTP08N100D2
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 1000V 0.8A TO220AB
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
800mA (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
-
RD sou (Max) @ Id, Vgs :
21 Ohm @ 400mA, 0V
Vgs (th) (Max) @ Id :
-
Chaje Gate (Qg) (Max) @ Vgs :
14.6nC @ 5V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
325pF @ 25V
Karakteristik FET :
Depletion Mode
Disipasyon Pouvwa (Max) :
60W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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