IXTH10P60 Pricing (USD) [10390PC Stock]
- 1 pcs$4.56124
- 10 pcs$4.10512
- 100 pcs$3.37532
- 500 pcs$2.82797
- Nimewo Pati:
- IXTH10P60
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET P-CH 600V 10A TO-247AD.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo, Tiristors - SCR, Modil pouvwa chofè, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Arrays and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in IXYS IXTH10P60 electronic components. IXTH10P60 can be shipped within 24 hours after order. If you have any demands for IXTH10P60, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTH10P60 Atribi pwodwi yo
Nimewo Pati :
IXTH10P60
Manifakti :
IXYS
Deskripsyon :
MOSFET P-CH 600V 10A TO-247AD
Seri :
-
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1 Ohm @ 5A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
160nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
4700pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
300W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247 (IXTH)
Pake / Ka :
TO-247-3
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