Infineon Technologies - BSL806NL6327HTSA1

KEY Part #: K6523892

[4014PC Stock]


    Nimewo Pati:
    BSL806NL6327HTSA1
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET 2N-CH 20V 2.3A 6TSOP.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays, Tiristors - DIACs, SIDACs, Tiristors - SCR, Transistors - IGBTs - Modil yo, Diodes - RF and Diodes - Bridge rèktifikateur ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies BSL806NL6327HTSA1 electronic components. BSL806NL6327HTSA1 can be shipped within 24 hours after order. If you have any demands for BSL806NL6327HTSA1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BSL806NL6327HTSA1 Atribi pwodwi yo

    Nimewo Pati : BSL806NL6327HTSA1
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET 2N-CH 20V 2.3A 6TSOP
    Seri : OptiMOS™
    Estati Pati : Obsolete
    FET Kalite : 2 N-Channel (Dual)
    Karakteristik FET : Logic Level Gate
    Drenaj nan Voltage Sous (Vdss) : 20V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.3A
    RD sou (Max) @ Id, Vgs : 57 mOhm @ 2.3A, 2.5V
    Vgs (th) (Max) @ Id : 750mV @ 11µA
    Chaje Gate (Qg) (Max) @ Vgs : 1.7nC @ 2.5V
    Antre kapasite (Ciss) (Max) @ Vds : 259pF @ 10V
    Pouvwa - Max : 500mW
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : SOT-23-6 Thin, TSOT-23-6
    Pake Aparèy Founisè : PG-TSOP-6-6