Infineon Technologies - IRGS4B60KD1PBF

KEY Part #: K6424493

IRGS4B60KD1PBF Pricing (USD) [9291PC Stock]

  • 50 pcs$0.75342

Nimewo Pati:
IRGS4B60KD1PBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IGBT 600V 11A 63W D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - FETs, MOSFETs - Arrays, Tiristors - TRIACs, Diodes - Zener - Arrays, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - RF, Tiristors - SCR and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
We specialize in Infineon Technologies IRGS4B60KD1PBF electronic components. IRGS4B60KD1PBF can be shipped within 24 hours after order. If you have any demands for IRGS4B60KD1PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRGS4B60KD1PBF Atribi pwodwi yo

Nimewo Pati : IRGS4B60KD1PBF
Manifakti : Infineon Technologies
Deskripsyon : IGBT 600V 11A 63W D2PAK
Seri : -
Estati Pati : Obsolete
Kalite IGBT : NPT
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 11A
Kouran - Pèseptè batman (Icm) : 22A
Vce (sou) (Max) @ Vge, Ic : 2.5V @ 15V, 4A
Pouvwa - Max : 63W
Oblije chanje enèji : 73µJ (on), 47µJ (off)
Kalite Antre : Standard
Gate chaje : 12nC
Td (on / off) @ 25 ° C : 22ns/100ns
Kondisyon egzamen an : 400V, 4A, 100 Ohm, 15V
Ranvèse Tan Reverse (trr) : 93ns
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè : D2PAK