GeneSiC Semiconductor - GB10SLT12-252

KEY Part #: K6454697

GB10SLT12-252 Pricing (USD) [15875PC Stock]

  • 1 pcs$3.60550
  • 5,025 pcs$3.58756

Nimewo Pati:
GB10SLT12-252
Manifakti:
GeneSiC Semiconductor
Detaye deskripsyon:
DIODE SCHOTTKY 1.2KV 10A TO252. Schottky Diodes & Rectifiers 1200V - 10A SiC Schottky Rect.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Modil pouvwa chofè, Diodes - Rèkteur - Single, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Single and Tiristors - SCR ...
Avantaj konpetitif:
We specialize in GeneSiC Semiconductor GB10SLT12-252 electronic components. GB10SLT12-252 can be shipped within 24 hours after order. If you have any demands for GB10SLT12-252, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GB10SLT12-252 Atribi pwodwi yo

Nimewo Pati : GB10SLT12-252
Manifakti : GeneSiC Semiconductor
Deskripsyon : DIODE SCHOTTKY 1.2KV 10A TO252
Seri : -
Estati Pati : Not For New Designs
Kalite dyòd : Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) : 1200V
Kouran - Mwayèn Rèktifye (Io) : 10A
Voltage - Forward (Vf) (Max) @ Si : 2V @ 10A
Vitès : No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) : 0ns
Kouran - Fèy Reverse @ Vr : 250µA @ 1200V
Kapasite @ Vr, F : 520pF @ 1V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63
Pake Aparèy Founisè : TO-252
Operating Tanperati - Junction : -55°C ~ 175°C
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