SI6968BEDQ-T1-GE3 Pricing (USD) [354596PC Stock]
- 1 pcs$0.10431
- 3,000 pcs$0.09441
- Nimewo Pati:
- SI6968BEDQ-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET 2N-CH 20V 5.2A 8-TSSOP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - RF and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SI6968BEDQ-T1-GE3 electronic components. SI6968BEDQ-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI6968BEDQ-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI6968BEDQ-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SI6968BEDQ-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET 2N-CH 20V 5.2A 8-TSSOP
Seri :
TrenchFET®
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual) Common Drain
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.2A
RD sou (Max) @ Id, Vgs :
22 mOhm @ 6.5A, 4.5V
Vgs (th) (Max) @ Id :
1.6V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
18nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
-
Pouvwa - Max :
1W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-TSSOP (0.173", 4.40mm Width)
Pake Aparèy Founisè :
8-TSSOP
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