Vishay Siliconix - SIHF5N50D-E3

KEY Part #: K6392625

SIHF5N50D-E3 Pricing (USD) [61527PC Stock]

  • 1 pcs$0.63551
  • 10 pcs$0.56318
  • 100 pcs$0.44507
  • 500 pcs$0.32651
  • 1,000 pcs$0.25777

Nimewo Pati:
SIHF5N50D-E3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 500V 5.3A TO220 FLPK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Diodes - Rèkteur - Arrays, Tiristors - SCR, Transistors - IGBTs - Modil yo, Transistors - IGBTs - Single, Modil pouvwa chofè, Transistors - Objektif espesyal and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SIHF5N50D-E3 electronic components. SIHF5N50D-E3 can be shipped within 24 hours after order. If you have any demands for SIHF5N50D-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHF5N50D-E3 Atribi pwodwi yo

Nimewo Pati : SIHF5N50D-E3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 500V 5.3A TO220 FLPK
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5.3A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 1.5 Ohm @ 2.5A, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 20nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 325pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 30W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220 Full Pack
Pake / Ka : TO-220-3 Full Pack