HUF76609D3ST Pricing (USD) [225667PC Stock]
- 1 pcs$0.16472
- 2,500 pcs$0.16390
- Nimewo Pati:
- HUF76609D3ST
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 100V 10A DPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR - Modil yo, Diodes - Zener - Arrays, Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - DIACs, SIDACs and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor HUF76609D3ST electronic components. HUF76609D3ST can be shipped within 24 hours after order. If you have any demands for HUF76609D3ST, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HUF76609D3ST Atribi pwodwi yo
Nimewo Pati :
HUF76609D3ST
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 100V 10A DPAK
Seri :
UltraFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
160 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
16nC @ 10V
Vgs (Max) :
±16V
Antre kapasite (Ciss) (Max) @ Vds :
425pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
49W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-252AA
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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