FF6MR12W2M1B11BOMA1 Pricing (USD) [291PC Stock]
- 1 pcs$158.99959
- Nimewo Pati:
- FF6MR12W2M1B11BOMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET MODULE 1200V 200A.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR - Modil yo, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Single, Modil pouvwa chofè and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies FF6MR12W2M1B11BOMA1 electronic components. FF6MR12W2M1B11BOMA1 can be shipped within 24 hours after order. If you have any demands for FF6MR12W2M1B11BOMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FF6MR12W2M1B11BOMA1 Atribi pwodwi yo
Nimewo Pati :
FF6MR12W2M1B11BOMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET MODULE 1200V 200A
Seri :
CoolSiC™
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Silicon Carbide (SiC)
Drenaj nan Voltage Sous (Vdss) :
1200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
200A (Tj)
RD sou (Max) @ Id, Vgs :
5.63 mOhm @ 200A, 15V
Vgs (th) (Max) @ Id :
5.55V @ 10mA
Chaje Gate (Qg) (Max) @ Vgs :
496nC @ 15V
Antre kapasite (Ciss) (Max) @ Vds :
14700pF @ 800V
Pouvwa - Max :
20mW (Tc)
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake / Ka :
Module
Pake Aparèy Founisè :
AG-EASY2BM-2
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