Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET 2N-CH 100V 3.5A 8SOIC
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.5A
RD sou (Max) @ Id, Vgs :
62 mOhm @ 3.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
7.1nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
398pF @ 50V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SOIC