Vishay Siliconix - IRF840LPBF

KEY Part #: K6393276

IRF840LPBF Pricing (USD) [55206PC Stock]

  • 1 pcs$0.71180
  • 1,000 pcs$0.70826

Nimewo Pati:
IRF840LPBF
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 500V 8A TO-262.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Modil pouvwa chofè, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Single, Transistors - Objektif espesyal, Tiristors - TRIACs, Transistors - IGBTs - Single and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
We specialize in Vishay Siliconix IRF840LPBF electronic components. IRF840LPBF can be shipped within 24 hours after order. If you have any demands for IRF840LPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRF840LPBF Atribi pwodwi yo

Nimewo Pati : IRF840LPBF
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 500V 8A TO-262
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 850 mOhm @ 4.8A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 63nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1300pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 125W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-263AB
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB